Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture
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概要
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We propose and computationally analyze a nonvolatile static random access memory (NV-SRAM) cell using magnetic tunnel junctions (MTJs) with magnetic-field-free current-induced magnetization switching (CIMS) architecture. A pair of MTJs connected to the storage nodes of a standard SRAM cell with CIMS architecture enables fully electrical store and restore operations for nonvolatile logic information. A wide range of tunneling magnetoresistance (TMR) ratios and $V_{\text{half}}$ (the bias voltage when the TMR ratio is reduced to half its original value) values are acceptable for the operation of the proposed NV-SRAM cell. Successful operation can be easily achieved when moderate TMR and $V_{\text{half}}$ values such as 100% and 100 mV, respectively, are used. The proposed NV-SRAM is expected to be a key component of next-generation power-gating logic systems with extremely low static-power dissipation.
- 2009-04-25
著者
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Sugahara Satoshi
Imaging Science And Engineering Laboratory Tokyo Institute Of Technology
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Sugahara Satoshi
Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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