Electron Beam Doping (Superdiffusion) in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism (Secondary-Ion Mass Spectrometer and Photoluminescence Measurements)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-30
著者
-
FUJIMOTO Hiroshi
Department of Electronics, Faculty of Engineering, Tottori University
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Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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