Electron Beam Doping in Damageless Regions of Semiconductors by the Kick-Out Mechanism (Interstitialcy and Direct Interstitial Mechanism)
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概要
- 論文の詳細を見る
It is demonstrated that the interchange of impurity foreign atoms between substitutional and interstitial sites occurring during the diffusion of impurities in damage-free Si and GaAs due to the electron beam doping by superdiffusion is controlled by the kick-out mechanism. Their diffusion profiles in semiconductors are in good agreement with the exact solution of Seeger's theory of the kick-out diffusion.
- 社団法人応用物理学会の論文
- 1998-12-30
著者
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FUJIMOTO Hiroshi
Department of Electronics, Faculty of Engineering, Tottori University
-
Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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Fujimoto Hiroshi
Department Of Applied Electronics Daido Institute Of Technology
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