Typical Electron Beam Doping(Superdiffusion)of Impurity Atoms in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism
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概要
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Experiments involving 750keV electron beam doping(EBD)of Si and Zn atoms into GaAs were performed for systems of GaAs(layer 3)/Si(Zn)//Si(Zn)/GaAs(layer 1). The Si(Zn)/GaAs consists of Si(Zn)evaporation-deposited layers on GaAs wafers. The overlying layer is in contact only with one other Si(Zn)layer. The surface of layer 3(GaAs)was irradiated with a fluence of(〜3.7-5.0)×10^<17> electrons・cm^<-2> at 750keV and at 100°C in a N_2 gas atmosphere at a mean current density of 8.1 μA・mc^<-2> using a Van de Graaff accelerator. After irradiation, the remaining unreacted Si and Zn layers were carefully removed by chemical etching. It was confirmed by Auger electron spectroscopy that no Si or Zn layer remained on the wafer after etching. The unannealed GaAs crystals were measured by secondary ion mass spectrometry(SIMS)and photoluminescence(PL). The diffusion depth of Zn atoms increased with the thicknesses of the deposited layers.
- 2000-12-30
著者
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FUJIMOTO Hiroshi
Department of Electronics, Faculty of Engineering, Tottori University
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Wada Takao
Department Of Applied Electronics Daido Institute Of Technology
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ASADA Shigeharu
Department of Applied Electronics, Daido Institute of Technology
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Asada Shigeharu
Department Of Applied Electronics Daido Institute Of Technology
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Fujimoto Hiroshi
Department Of Applied Electronics Daido Institute Of Technology
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Fujimoto Hiroshi
Department of Advanced Energy, Graduate School of Frontier Sciences, The University of Tokyo
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