HONDA Yoshiaki | Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

スポンサーリンク

概要

• 同名の論文著者
• Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Instituの論文著者

関連著者

• 小田 俊理

  東工大工

• 小田 俊理

  東京工業大学量子ナノエレクトロニクス研究センター

• DUTTA Amit

  Research Center for Quantum Effect Electronics, Tokyo Institute of Technology

• ODA Shunri

  Research Center for Quantum Effect Electronics, Tokyo Institute of Technology

• Dutta A

  Tokyo Inst. Technol. Tokyo Jpn

• Dutta Amit

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Masuda Kohzoh

  Material Science Tsukuba University

• Oda S

  Tokyo Inst. Technol. Tokyo Jpn

• Oda Shunri

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Oda Shunri

  The Graduate School At Nagatsuta Tokyo Institute Of Technology

• KIMURA Masao

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• HONDA Yoshiaki

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• OTOBE Masanori

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• ITOH Akira

  Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institu

• Kimura M

  Murata Mfg. Co. Ltd.

• Honda Yoshiaki

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Kimura M

  Department Of Electrical Engineering Faculty Of Engineering Nagaoka University Of Technology

• Itoh A

  Ricoh Co. Ltd. Miyagi Jpn

• Miyamura Kazuo

  Department Of Applied Chemistry Faculty Of Engineering The University Of Tokyo

• Otobe M

  Research Center For Quantum Effect Electronics And Department Of Physical Electronics Tokyo Institut

• Itoh A

  Tokyo Inst. Technol. Tokyo Jpn

もっと見る 閉じる

著作論文

• Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing ( Quantum Dot Structures)

スポンサーリンク