Silicon Epitaxial Growth by the Radical Beam of Glow-Discharge Decomposed Silane

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概要

• 論文の詳細を見る

• Epitaxial films of silicon on silicon were formed by the radical beam produced by glow-discharge decomposition of SiH_4. The radical beam was effused to a substrate located in the growth region through an orifice which separated the film growth region from the discharge region. Film formation took place whenever the mean free path of radical species was larger than the distance between the orifice and the substrate. Epitaxial growth occurred at the substrate temperature above 550℃. The epitaxial films had mirror-like surfaces.

• 社団法人応用物理学会の論文
• 1984-11-20

著者

• Isu Toshiro

  Central Research Laboratory Mitsubishi Electric Corporation

• OGATA Hitoshi

  Central Research Laboratory, Mistubishi Electric Corporation

• Ogata Hitoshi

  Central Research Laboratory Mitsubishi Electric Corporation

• Ogata Hitoshi

  Central Research Laboratory Mistubishi Electric Corporation

• MARUNO Shigemitsu

  Central Research Laboratory, Mitsubishi Electric Corporation

• Maruno Shigemitsu

  Central Research Laboratory Mitsubishi Electric Corporation

関連論文

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• Role of Carbon and Hydrogen in Reactive Ion Etching of InP by Gas Mixture of Ethane and Hydrogen
• Lateral Metalorganic Molecular Beam Epitaxy of GaAs on Patterned (111)B Substrates
• Silicon Epitaxial Growth by the Radical Beam of Glow-Discharge Decomposed Silane

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