Diffusion Mechanism of Cd in InP and InGaAs
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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Ohtsuka Ken-ichi
Central Research Laboratory Mistubishi Electric Corporation
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MATSUI Teruhito
Central Research Laboratory, Mistubishi Electric Corporation
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OGATA Hitoshi
Central Research Laboratory, Mistubishi Electric Corporation
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Ogata Hitoshi
Central Research Laboratory Mistubishi Electric Corporation
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Matsui Teruhito
Central Research Laboratory Mistubishi Electric Corporation
関連論文
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- Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors
- Fe and Al Concentrations in High Resistivity InP Layer Grown by Low-Temperature Liquid Phase Epitaxy
- Silicon Epitaxial Growth by the Radical Beam of Glow-Discharge Decomposed Silane