Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2009-10-25
著者
-
CHICHIBU Shigefusa
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
-
Chichibu Shigefusa
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
-
AMAIKE Hiroaki
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
-
HAZU Kouji
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
-
SAWAI Yutaka
Center for Advanced Nitride Technology (CANTech), Institute of Multidisciplinary Research for Advanc
-
Amaike Hiroaki
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
-
Sawai Yutaka
Center For Advanced Nitride Technology (cantech) Institute Of Multidisciplinary Research For Advance
関連論文
- Improvement of Al-Polar AlN Layer Quality by Three-Stage Flow-Modulation Metalorganic Chemical Vapor Deposition
- Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films
- Structural, Optical, and Homoepitaxial Studies on the Bulk GaN Single Crystals Spontaneously Nucleated by the Na-Flux Method