Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope
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概要
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A void in bonded silicon-on-insulator wafers before thinning has been characterized using a near-IR microscope with an interference filter for controlling the coherence length of the light source. The visibility of interference fringes is improved by controlling the coherence length of the light. The cause of the void formation is discussed by comparing the void shape obtained from an observation image with deflection curve models of discs under a uniformly distributed load of gas molecules or under a concentrated load of a particle. It is suggested that the void is formed by gas molecules trapped in the bonded interface.
- 2007-04-30
著者
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Uchikoshi Junichi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Ajari Noritaka
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hirokane Takaaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Arima Kenta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Ajari Noritaka
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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