Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst

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概要

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• A novel planarization technique for the GaN(0001) surface has been developed. In this method, the surface is oxidized by a photo-electrochemical reaction and the resulting oxide is removed using a solid acidic/basic catalyst. Smooth surfaces that are free from scratches and etch pits are obtained. Photoluminescence analysis shows that the intensity of the band-edge luminescence markedly increases after the planarization.

• 2009-12-25

著者

• SANO Yasuhisa

  Department of Precision Science and Technology, Graduate School of Engineering, University of Osaka

• Yamauchi Kazuto

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Arima Kenta

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Mimura Hidekazu

  Department Of Precision Science And Technology Graduate School Of Engineering Osaka University

• Okamoto Takeshi

  Department Of Cardiovascular Surgery Niigata City General Hospital

• Yamauchi Kazuto

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Murata Junji

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Sadakuni Shun

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Yagi Keita

  Ebara Corp., Fujisawa, Kanagawa 251-8502, Japan

• Hattori Azusa

  Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Murata Junji

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan

• Mimura Hidekazu

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Sano Yasuhisa

  Department of Applied Physics, Tokyo Institute of Technology

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