Improvement of Thickness Uniformity of Silicon on Insulator Layer by Numerically Controlled Sacrificial Oxidation Using Atmospheric-Pressure Plasma with Electrode Array System
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概要
- 論文の詳細を見る
Recently, silicon-on-insulator (SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs) have attracted great interest from manufacturers of semiconductor devices because of their excellent electrical characteristics. According to International Technology Roadmap for Semiconductors 2007, a very uniform surface Si layer will be required in a few years; however, no production method has been identified. To achieve the required uniformity in surface Si layer thickness, a new method of numerically controlled sacrificial oxidation using atmospheric-pressure plasma was developed. This paper demonstrates a new electrode array system developed for rapid processing. A very uniform oxide with a peak-to-valley (PV) of 0.13 nm was obtained; the relationship of oxide thickness versus oxidation time is shown.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-08-25
著者
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SANO Yasuhisa
Department of Precision Science and Technology, Graduate School of Engineering, University of Osaka
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Mimura Hidekazu
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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MATSUYAMA Satoshi
Department of Advanced Pathobiology, Graduate School of Life & Environmental Sciences, Osaka Prefecture University
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Matsuyama Satoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Kamisaka Shohei
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yoshinaga Keinosuke
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamauchi Kazuto
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamauchi Kazuto
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Sano Yasuhisa
Department of Applied Physics, Tokyo Institute of Technology
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