Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate
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概要
- 論文の詳細を見る
In this paper, a new defect-free planarization technique for 4H–SiC(0001) substrate is described. This technique uses hydroxyl radicals (OH radicals) that are generated on an Fe metal surface in a hydrogen peroxide (H2O2) solution. First, the oxidation of a 4H–SiC substrate by OH radicals is investigated by X-ray photoelectron spectroscopy (XPS) analysis. Next, the planarization of the 4H–SiC substrate is conducted. A very flat and smooth surface without any scratches and etch pits is obtained. The planarized surface has a step-terrace structure.
- 2008-01-25
著者
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SANO Yasuhisa
Department of Precision Science and Technology, Graduate School of Engineering, University of Osaka
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Mimura Hidekazu
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Okamoto Takeshi
Department Of Cardiovascular Surgery Niigata City General Hospital
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Hara Hideyuki
Department Of Electro Photo Optics Faculty Of Engineering Tokai University
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Yamauchi Kazuto
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kubota Akihisa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Yagi Keita
Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Murata Junji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Kubota Akihisa
Department of Mechanical Engineering and Materials Science, Kumamoto University, 2-39-1 Kurokami, Kumamoto 860-8555, Japan
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Hara Hideyuki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Sano Yasuhisa
Department of Applied Physics, Tokyo Institute of Technology
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Sano Yasuhisa
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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