Beveling of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma
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概要
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Although beveling is essential for preventing the chipping of particles from the edge of a wafer during surface polishing, there is no high-efficiency beveling method for a silicon carbide wafer because of its hardness and chemical inertness. Thus, in this study, plasma etching using atmospheric-pressure plasma is applied for the beveling of a silicon carbide wafer. As a result, an initially square corner was well rounded within 20–30 min. The beveling rate was highest at the start of processing and decreased with increasing radius of curvature. It was proven that the beveling phenomenon was due to the electric-field concentration at the edge of the wafer as determined by calculating electric-field intensity.
- 2010-08-25
著者
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YAMAMURA Kazuya
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka Un
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SANO Yasuhisa
Department of Precision Science and Technology, Graduate School of Engineering, University of Osaka
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Yamauchi Kazuto
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Kato Takehiro
Department Of Chemistry Graduate School Of Science And Technology Tokyo Institute Of Technology
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Mimura Hidekazu
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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MATSUYAMA Satoshi
Department of Advanced Pathobiology, Graduate School of Life & Environmental Sciences, Osaka Prefecture University
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Matsuyama Satoshi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yamauchi Kazuto
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Mimura Hidekazu
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Kato Takehiro
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Sano Yasuhisa
Department of Applied Physics, Tokyo Institute of Technology
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