Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation
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概要
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A dry polishing technique combined with the atmospheric-pressure water vapor plasma oxidation has been proposed for the high-integrity smoothing of SiC materials. Optical emission spectra revealed the composition of the plasma, and strong emission from OH, which has a high oxidation-reduction potential (ORP), was observed. X-ray photoelectron spectroscopy (XPS) measurements indicated that the irradiation of water vapor plasma efficiently oxidized the surface of SiC because of the reactive species in plasma such as OH radicals. Swell-like structures were also observed along scratches on the SiC surface. Plasma-assisted polishing using CeO<sub>2</sub> abrasive enabled us to reduce the surface roughness of SiC without introducing crystallographical subsurface damage, and an atomically flat scratch-free surface with an rms roughness of less than 0.1 nm was obtained.
- 2011-08-25
著者
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YAMAMURA Kazuya
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka Un
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Deng Hui
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Hattori Azusa
Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
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Takiguchi Tatsuya
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Ueda Masaki
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Zettsu Nobuyuki
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamamura Kazuya
Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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