Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid
スポンサーリンク
概要
- 論文の詳細を見る
We used catalyst-referred etching, which is an abrasive-free planarization method, to produce an extremely smooth surface on a 4H-SiC substrate. However, the removal rate was lower than that obtained by chemical mechanical polishing, which is the planarization method generally used for SiC substrates. To improve the removal rate, we investigated its dependence on rotational velocity and processing pressure. We found that the removal rate increases in proportion to both rotational velocity and processing pressure. A lapped 4H-SiC substrate was planarized under conditions that achieved the highest removal rate of approximately 500 nm/h. A smooth surface with a root-mean square roughness of less than 0.1 nm was fabricated within 15 min. Because the surface, which was processed under conditions of high rotational velocity and high processing pressure, consisted of a step--terrace structure, it was well ordered up to the topmost surface.
- 2012-04-25
著者
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SANO Yasuhisa
Department of Precision Science and Technology, Graduate School of Engineering, University of Osaka
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Yamauchi Kazuto
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Inagaki Kouji
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Okamoto Takeshi
Department Of Cardiovascular Surgery Niigata City General Hospital
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Pho Bui
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yamauchi Kazuto
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Murata Junji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sadakuni Shun
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Yagi Keita
Ebara Corp., Fujisawa, Kanagawa 251-8502, Japan
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Yagi Keita
Ebara Corporation, Fujisawa, Kanagawa 251-8502, Japan
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Murata Junji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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Tachibana Kazuma
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Asano Hiroya
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Isohashi Ai
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Inagaki Kouji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Arima Kenta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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Sano Yasuhisa
Department of Applied Physics, Tokyo Institute of Technology
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