Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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有馬 健太
阪大院工
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ARIMA Kenta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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MORITA Mizuho
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Hashimoto Hideaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hashimoto Hideaki
Department Of Geoscience Interdisciplinary Faculty Of Science And Engineering Shimane University
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UCHIKOSHI Junichi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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YAMADA Ryuta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Yamada Ryuta
Department Of Precision Science And Technology School Of Engineering Osaka University
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Uchikoshi Junichi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hashimoto Hideaki
Department Of Chemistry Faculty Of Science Kumamoto University
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