Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
- 2007-09-19
著者
-
有馬 健太
阪大院工
-
ARIMA Kenta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
MORITA Mizuho
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
-
Morita Mizuho
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
-
Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
HIROKANE Takaaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
UCHIKOSHI Junichi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
YAMADA Ryuta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
-
WU Xing
Department of Precision Science and Technology, School of Engineering, Osaka University
-
Wu Xing
Department Of Information Systems Engineering Graduate School Of Information Science And Technology
-
Yamada Ryuta
Department Of Precision Science And Technology School Of Engineering Osaka University
-
Uchikoshi Junichi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
-
Wu Xing
Department Of Precision Science And Technology School Of Engineering Osaka University
-
Hirokane Takaaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
関連論文
- 22pGQ-6 超平坦化加工した4H-SiC(0001)表面上のグラフェン(22pGQ 表面界面構造,領域9(表面・界面,結晶成長))
- 触媒基準エッチング法(CAtalyst Referred Ething: CARE)の開発--SiC, GaN基板加工への応用 (特集 グリーンエネルギー時代を支える先進加工技術とその課題)
- 触媒基準エッチング法
- EEM(Elastic Emission Machining)によるSi(001)表面の平坦化(第2報) : 加工表面の原子像観察と構造評価
- 超清浄EEM(Elastic Emission Machining)システムに関する研究 : 最適加工条件の探索
- 超清浄EEM (Elastic Emission Machining)加工システムの開発:加工表面の原子レベルでの評価
- 原子レベルで平坦な表面の創成技術
- レーザ光散乱法によるSiウエハ表面上の極薄酸化膜段差の計測
- Surface Hall Potentiometry for Characterizing Semiconductor Films (Special Issue: Solid State Devices & Materials)
- Surface Hall Potentiometry to Characterize Functional Semiconductor Films
- ナノ材料・表面の原子構造・機能評価 : STMをベースにした新規計測手法の開発とその応用
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- Atomic Structure of Si(001)-c(4×4) Formed by Heating Processes after Wet Cleaning and Its First-Principles Study
- 走査型トンネル顕微鏡による水素化アモルファスシリコン表面の原子像観察
- 走査型トンネル顕微鏡による水素化アモルファスシリコン表面の構造解析
- SMTによる水素終端化Si(001)表面の昇温過程の観察
- 走査型トンネル顕微鏡による水素化アモルファスシリコン表面の構造解析
- STMによる湿式洗浄Si(110)表面の昇温過程の観察
- STMによる溶液処理水素終端化Si(001)表面の原子構造観察
- STMによる溶液処理水素終端化Si(001)表面の観察
- STMによる水素終端化Si(001)ウェーハ表面の観察
- モノメチルシラン(SiH_3CH_3)を用いた熱CVDによるシリコンカーバイド膜の作製
- 超平坦化加工を施した4H-SiC(0001)表面 : 高品質グラフェン作製への応用
- STM/STSによるSiウェーハ表面の金属汚染物の極微量元素分析
- STM/STSによる金属吸着Si(001)表面の観察
- STM/STSによるSiウェーハ表面の金属原子の観察
- STM/STSによるSiウェーハ表面の金属汚染物の極微量元素分析
- Genome-wide microsatellite analysis of focal nodular hyperplasia : a strong tool for the differential diagnosis of non-neoplastic liver nodule from hepatocellular carcinoma
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- Characterization and Control of Native Oxide on Silicon
- Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
- Scanning Surface Hall Potentiometry on Semiconductor Wafers
- Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Liquid Sensing by Nano-Gap Device with Treated Surface
- Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
- Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope
- Development of Nanao-Gap Device for Biosensor
- Photodetector Characteristics of Metal-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide Gate
- Nano-Gap Device for Liquid Sensing
- Effect of Preoxide on the Structure of Thernmal Oxide
- FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO_2 Surfaces
- Native Oxide Growing Behavior on Si Crystal Structure and Resistivity
- Effect of Silicon Wafer In Situ Cleaning on the Chemical Structure of Ultrathin Silicon Oxide Film
- Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating
- Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling
- Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
- Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope
- Malignant Fibrous Histiocytoma Arising from the Renal Capsule
- C-12-5 Methodology for Layout-Based Diagnosis of VLSI Chips Considering Temperature Distribution
- Choroid Plexus Metastasis of Colon Cancer
- Selective Tungsten Chemical Vapor Deposition with High Deposition Rate for ULSI Application
- Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
- Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst
- 22pRC-9 歪みシリコンの価電子帯分散構造の実験的解明(22pRC 表面界面電子物性(表面伝導・光電子分光),領域9(表面・界面,結晶成長))
- Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate
- Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid
- Atomic Structure of Si(001)-$c(4\times 4)$ Formed by Heating Processes after Wet Cleaning and Its First-Principles Study
- Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
- Development of Surface Hall Potentiometry to Reveal the Variation of Drift Velocity of Carriers in Semiconductor Materials
- Surface Hall Potentiometry for Characterizing Semiconductor Films
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Interferometry
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate
- Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling