Hirokane Takaaki | Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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概要
- Hirokane Takaakiの詳細を見る
- 同名の論文著者
- Department Of Precision Science And Technology Graduate School Of Engineering Osaka Universityの論文著者
関連著者
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Uchikoshi Junichi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hirokane Takaaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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有馬 健太
阪大院工
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ARIMA Kenta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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MORITA Mizuho
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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Morita Mizuho
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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HIROKANE Takaaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
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UCHIKOSHI Junichi
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University
著作論文
- Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Liquid Sensing by Nano-Gap Device with Treated Surface
- Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope
- Development of Nanao-Gap Device for Biosensor
- Nano-Gap Device for Liquid Sensing
- Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope
- Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate