Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate
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概要
- 論文の詳細を見る
The photodetective characteristics of aluminum grid gate–ultrathin silicon dioxide–silicon structures have been studied. The on–off ratio calculated from the photo and dark current densities rapidly changes at the threshold optical-power density. The threshold optical-power density is controlled by the silicon dioxide film thickness and increases with decreasing silicon dioxide film thickness. The difference between the surface potential with and without light irradiation rapidly changes at the same optical-power density. Holes do not significantly accumulate under optical-power densities lower than the threshold.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Yamada Ryuta
Department Of Precision Science And Technology School Of Engineering Osaka University
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Uchikoshi Junichi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hashimoto Hideaki
Department Of Chemistry Faculty Of Science Kumamoto University
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Hirokane Takaaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hashimoto Hideaki
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
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