Surface Hall Potentiometry for Characterizing Semiconductor Films
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概要
- 論文の詳細を見る
A novel surface potentiometry method is proposed for the evaluation of internal electronic properties or structures of semiconductor films. In this method, the Hall effect inside a sample is detected as the change in surface potential, which we call the surface Hall potential. The control of the magnetic field in the horizontal plane of the sample is realized by the transfer of a neodymium-iron-boron magnet. Surface Hall potential measurements are performed by the Kelvin method on p-type and n-type Si wafers, and an n-type silicon-on-insulator (SOI) wafer. It is demonstrated that the surface Hall potential is directly proportional to the calculated Hall voltage generated between the surface and bottom of the sample, and that the polarity of the surface Hall potential depends on the carrier type (hole or electron).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Nakaoka Ryoji
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hiwa Kenji
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hiwa Kenji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arima Kenta
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Nakaoka Ryoji
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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