Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
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概要
- 論文の詳細を見る
A patterned oxide buried in bonded silicon-on-insulator (SOI) wafers before thinning has been characterized using a near-infrared scattering topography system. This system has been combined with transmission and reflection microscopy. The edge of the patterned oxide buried in the SOI wafer has been observed. Micron-scaled oxide disks formed by the focused ion beam technique in stacked SOI structures have been observed by near-infrared scattering topography. A particle has been identified to be located inside a silicon/air/silicon structure by both near-infrared and visible laser scattering topographies. The size of the particle inside the silicon/air/silicon structure has been estimated to be 0.2 μm from the intensity of scattered near-infrared light. This method has an advantage over semiconductor failure analysis in future scaled-down technologies.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Morita Mizuho
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Wu Xing
Department Of Information Systems Engineering Graduate School Of Information Science And Technology
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Yamada Ryuta
Department Of Precision Science And Technology School Of Engineering Osaka University
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Uchikoshi Junichi
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Hirokane Takaaki
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
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Takeuchi Akihiro
Department of Chemical Engineering, Tokyo Institute of Technology
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Takeuchi Akihiro
Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Morita Mizuho
Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Yamada Ryuta
Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Arima Kenta
Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Uchikoshi Junichi
Department of Precision Science and Technology, School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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