Atomic Structure of Si(001)-$c(4\times 4)$ Formed by Heating Processes after Wet Cleaning and Its First-Principles Study
スポンサーリンク
概要
- 論文の詳細を見る
In order to yield an atomically flat Si(001) reconstructed surface at as low a temperature as possible, 2-step heating processes after wet cleaning are proposed based on thermal desorption spectroscopy (TDS) spectra. They are pre-annealing at 300°C for 60 min, and subsequent flashing at 650°C. The pre-annealing desorbs one hydrogen atom at each dihydride on the surface, and the flashing desorbs the rest of the hydrogen atoms. Furthermore, for practical device processes, it is proposed that the 2-step heating processes should be performed in a hydrogen ambient to prevent the surface from adsorbing contaminations. Scanning tunneling microscopy (STM) and low energy electron diffraction (LEED) observations reveal that an atomically flat Si(001)-$c(4\times 4)$ surface is obtained by flashing at 650°C in not only ultrahigh vacuum, but also in hydrogen ambient. STM images and first-principles simulations demonstrate that the Si(001)-$c(4\times 4)$ structure is explained by a missing-dimer model.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
-
Uesugi Yuji
Research Center For Ultra-precision Science And Technology Osaka University
-
Arima Kenta
Department Of Precision Science And Technology Graduate School Of Engineering Osaka University
-
Hirose Kikuji
Department Of Mechanical Engineering Kochi National College Of Technology
-
Ono Tomoya
Research Center For Ultra-precision Science And Technology Osaka University
-
Mori Yuzo
Research Center For Ultra-precision Science And Technology Osaka University
-
Endo Katsuyoshi
Research Center For Ultra-precision Science And Technology Graduate School Of Engineering University
-
Ono Tomoya
Research Center for Ultra-precision Science and Technology, Osaka University, Suita, Osaka 565-0871, Japan
-
Mori Yuzo
Research Center for Ultra-precision Science and Technology, Osaka University, Suita, Osaka 565-0871, Japan
-
Uesugi Yuji
Research Center for Ultra-precision Science and Technology, Osaka University, Suita, Osaka 565-0871, Japan
-
Arima Kenta
Department of Precision Science and Technology, Osaka University, Suita, Osaka 565-0871, Japan
関連論文
- Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors
- Surface Hall Potentiometry to Characterize Functional Semiconductor Films
- First-principles Calculation Method for Electronic Structures of Nanojunctions Suspended between Semi-infinite Electrodes
- First-Principles Evaluations of Machinability Dependency on Powder Material in Elastic Emission Machining
- First-Principles Study on Electron Conduction Property of Monatomic Sodium Nanowire
- Metal-Insulator-Gap-Insulator-Semiconductor Structure for Sensing Devices
- Scanning Surface Hall Potentiometry on Semiconductor Wafers
- Steep On-Off Ratio of Photocurrent through Metal-Oxide-Semiconductor Tunneling Structures
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- Liquid Sensing by Nano-Gap Device with Treated Surface
- Photodetective Characteristics of Metal-Oxide-Semiconductor Tunneling Structure with Aluminum Grid Gate
- Characterization of Void in Bonded SOI Wafers by Controlling Coherence Length of Near-Infrared Microscope
- Development of Nanao-Gap Device for Biosensor
- Photodetector Characteristics of Metal-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide Gate
- Nano-Gap Device for Liquid Sensing
- Geometry and Conduction of an Infinite Single-Row Gold Wire
- First-Principles Calculations of Conductance for Na Quantum Wire
- Images of Scanning Tunneling Microscopy on the Si(001)-p(2 × 2) Reconstructed Surface
- FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO_2 Surfaces
- Isospin Degeneracy and Veneziano Representation in Pion-Nucleon Scattering
- Characterization of Void in Bonded Silicon-on-Insulator Wafers by Controlling Coherence Length of Light Source using Near-Infrared Microscope
- Sudden Suppression of Electron-Transmission Peaks in Finite-Biased Nanowires
- Characterization of Tunneling Current through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method
- Planarization of GaN(0001) Surface by Photo-Electrochemical Method with Solid Acidic or Basic Catalyst
- Defect-Free Planarization of 4H–SiC(0001) Substrate Using Reference Plate
- Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid
- Atomic Structure of Si(001)-$c(4\times 4)$ Formed by Heating Processes after Wet Cleaning and Its First-Principles Study
- Two-dimensional Submicron Focusing of Hard X-rays by Two Elliptical Mirrors Fabricated by Plasma Chemical Vaporization Machining and Elastic Emission Machining
- Development of Surface Hall Potentiometry to Reveal the Variation of Drift Velocity of Carriers in Semiconductor Materials
- Surface Hall Potentiometry for Characterizing Semiconductor Films
- Morphological Stability of Si(001) Surface Immersed in Fluid Mixture of Ultrapure Water and Silica Powder Particles in Elastic Emission Machining
- Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
- Theoretical Study on the Scanning Tunneling Microscopy Image of Cl-Adsorbed Si(001)
- Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
- High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma: Machining Characteristics of Silicon
- Absolute Line Profile Measurements of Silicon Plane Mirrors by Near-Infrared Interferometry
- Characterization of Patterned Oxide Buried in Bonded Silicon-on-Insulator Wafers by Near-Infrared Scattering Topography and Microscopy
- First-Principles Study on Electron-Conduction Properties of Single-Row Gold Nanowires
- First-Principles Calculation of Tunneling Current of H2- or NH3-Adsorbed Si(001) Surface in Scanning Tunneling Microscopy
- Photodetective Characteristics of Metal–Oxide–Semiconductor Tunneling Structure with Aluminum Grid Gate