First-Principles Calculation of Tunneling Current of H2- or NH3-Adsorbed Si(001) Surface in Scanning Tunneling Microscopy

スポンサーリンク

概要

• 論文の詳細を見る

• The tunneling current flowing between molecule-adsorbed Si(001) surfaces and a tip in scanning tunneling microscopy (STM) is studied using the first-principles electron-transport calculations. The amount of the tunneling current evaluated in this study is consistent with the experimental results. The tunneling current with the tip above the molecule-adsorbed dimer is lower than that with the tip above the bare dimer, which is interpreted by the stabilization of the Si–Si $\pi$ bonding states due to adsorption of the molecules. These results agree with the experimental results, where molecule-adsorbed dimers look geometrically lower than bare dimers.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-03-30

著者

• Hirose Kikuji

  Department Of Mechanical Engineering Kochi National College Of Technology

• Endo Katsuyoshi

  Research Center For Ultra-precision Science And Technology Graduate School Of Engineering University

• Horie Shinya

  Research Center for Ultra-Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

• Ono Tomoya

  Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

• Kuwahara Yuji

  Department of Advanced Science and Biotechnology, Osaka University, Suita, Osaka 565-0871, Japan

• Endo Katsuyoshi

  Research Center for Ultra-precision Science and Technology, Osaka University, Suita, Osaka 565-0871, Japan

• Horie Shinya

  Research Center for Ultra-Precision Science and Technology, Osaka University, Suita, Osaka 565-0871, Japan

関連論文

• Hard X-ray Diffraction-Limited Nanofocusing with Kirkpatrick-Baez Mirrors
• Force Microscopy Study of SrTiO_3(001) Surfaces with Single Atomic-Layer Steps
• First-principles Calculation Method for Electronic Structures of Nanojunctions Suspended between Semi-infinite Electrodes
• First-Principles Evaluations of Machinability Dependency on Powder Material in Elastic Emission Machining
• First-Principles Study on Electron Conduction Property of Monatomic Sodium Nanowire
• Study of the Si(111) "5 × 5"-Cu Surface Structure by X-Ray Diffractionand Scanning Tunneling Microscopy : Surface, Interfaces, and Films
• Application of Simple Mechanical Polishing to Fabrication of Nanogap Flat Electrodes
• Construction of Independently Driven Double-Tip Scanning Tunneling Microscope
• Scanning Tunneling Microscopy Observation of Langmuir-Blodgett Diacetylene Compound Films Deposited by Schaefer's Method (Short Note)
• Geometry and Conduction of an Infinite Single-Row Gold Wire
• First-Principles Calculations of Conductance for Na Quantum Wire
• Images of Scanning Tunneling Microscopy on the Si(001)-p(2 × 2) Reconstructed Surface
• Isospin Degeneracy and Veneziano Representation in Pion-Nucleon Scattering
• Site-Independent Adsorption of Hydrogen Atoms Deposited from a Scanning Tunneling Microscope Tip onto a Si(111)-7 × 7 Surface
• Enhanced Red-Light Emission by Local Plasmon Coupling of Au Nanorods in an Organic Light-Emitting Diode
• First-Principles Study on Electronic Structure of Dangling Bond at Ge/GeO2 Interfaces
• Sudden Suppression of Electron-Transmission Peaks in Finite-Biased Nanowires
• Enhanced Performance of Gate-First p-Channel Metal–Insulator–Semiconductor Field-Effect Transistors with Polycrystalline Silicon/TiN/HfSiON Stacks Fabricated by Physical Vapor Deposition Based In situ Method
• Scanning Tunneling Microscopy Combined with Hard X-ray Microbeam of High Brilliance from Synchrotron Radiation Source
• Atomic Structure of Si(001)-$c(4\times 4)$ Formed by Heating Processes after Wet Cleaning and Its First-Principles Study
• Two-dimensional Submicron Focusing of Hard X-rays by Two Elliptical Mirrors Fabricated by Plasma Chemical Vaporization Machining and Elastic Emission Machining
• Ultraprecision Machining Utilizing Numerically Controlled Scanning of Localized Atmospheric Pressure Plasma
• Theoretical Study on the Scanning Tunneling Microscopy Image of Cl-Adsorbed Si(001)
• Visible Light Irradiation Effects on STM Observations of Hydrogenated Amorphous Silicon Surfaces
• High-Spatial-Resolution Machining Utilizing Atmospheric Pressure Plasma: Machining Characteristics of Silicon
• Structural Analysis of Bismuth Nanowire by X-Ray Standing Wave Method
• First-Principles Study on Electron-Conduction Properties of Single-Row Gold Nanowires
• First-Principles Calculation of Tunneling Current of H2- or NH3-Adsorbed Si(001) Surface in Scanning Tunneling Microscopy
• Application of Simple Mechanical Polishing to Fabrication of Nanogap Flat Electrodes
• Construction of Independently Driven Double-Tip Scanning Tunneling Microscope

もっと見る 閉じる

スポンサーリンク