Katayama Toshiharu | Graduate School of Engineering, Osaka University
スポンサーリンク
概要
関連著者
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Umeno M
Department Of Electronic Engineering Chubu University
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Umeno Masayoshi
Department Of Electronic And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electric And Computer Engineering Nagoya Institute Of Technology
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Umeno Masayoshi
Department Of Electronic Mechanical Engineering Nagoya University
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Umeno M
Fukui Univ. Technol. Fukui Jpn
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Umeno Masataka
Department Of Material And Life Science Graduate School Of Engineering Osaka University
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Umeno Masataka
Graduate School Of Engineering Osaka University
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KAWAZU Satoru
Department of Electronics and Photonic Systems Engineering, Kochi University of Technology
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Yamamoto H
Sharp Corp. Nara Jpn
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Yamamoto H
College Of Science And Technology Nihon University
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Kawazu S
Department Of Electronics And Photonic Systems Engineering Kochi University Of Technology
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MASHIKO Yoji
ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation
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Mashiko Y
Mitsubishi Electric Corp. Hyogo Jpn
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Katayama T
Precision & Intelligence Laboratory Tokyo Institute Of Technology
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Katayama Toshiharu
Graduate School of Engineering, Osaka University
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Yamamoto Hidekazu
ULSI Development Center, Mitsubishi Electric Corporation
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Ikeno Masahiko
ULSI Development Center, Mitsubishi Electric Corporation
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Ikeno Masahiko
Ulsi Development Center Mitsubishi Electric Corporation
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Yamamoto H
Laboratory Of Bioorganic Chemistry School Of Pharmaceutical Sciences University Of Shizuoka
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Umeno M
Department Of Management And Information Science Faculty Of Engineering Fukui University Of Technolo
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Mashiko Yoji
Ulsi Development Center Mitsubishi Electric Corp
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Umeno M
Nagoya Inst. Technology
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Yamamoto Hidekazu
Ulsi Development Center Mitsubishi Electric Corporation
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Kawazu Satoru
Department of Electronic and Photonic Systems Engineering, Kochi University of Technology, Tosayamada, Kochi 782-0003, Japan
著作論文
- Effect of Ultrathin Top Silicon Layers on the X-Ray Photoelectron Emission from the Buried Oxide in Silicon-on-Insulator Wafers
- Accurate Thickness Determination of Both Thin SiO_2 on Si and Thin Si on SiO_2 by Angle-Resolved X-Ray Photoelectron Spectroscopy
- Elimination of X-Ray Photoelectron Diffraction Effect of Si(100) for Accurate Determination of SiO_2 Overlayer Thickness