Electrical Characterization of Lateral P-N Junctions Grown on (111)A GaAs Nonplanar Substrates by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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Kamigaki K
College Of Liberal Arts Toyama University
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Kudoh Kazuhide
Department Of Applied Physics Tokyo University Of Science
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KOBAYASHI Kikuo
ATR Optical and Radio Communications Research Laboratories
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Kunihiro Kazuaki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Yamamoto Takenori
Deptarment Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Yamamoto Tokujirou
Department Of Materials Science And Engineering Kyoto University
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YAMAMOTO Teiji
ATR Optical and Radio Communications Research Laboratories
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Takebe Toshihiko
Atr Optical And Radio Communications Research Laboratories
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INAI Makoto
ATR Optical and Radio Communications Research Laboratories
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FUJII Mototada
ATR Optical and Radio Communications Research Laboratories
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Yamamoto Takayoshi
The Institute Of Scientific And Industrial Research Osaka University
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