MgO Thin-Film Growth on Si(100)by Excimer Laser Ablation (第33回真空に関する連合講演会プロシ-ディングス)
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概要
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XRD peaks showed that (100) -preferred oriented thin film grows at substrate temperature ranging from 300 to 550°C. MgO thin film with (100) orientation grew at 500°C. At 600°C the (111) peak increased markedly. The FWHM of XRD at the (100) peak decreased with increasing substrate temperature.<BR>At a substrate temperature of 300 to 550°C, (100) -preferred orientation of the crystalline state was observed. The (100) peak ratio is independent of O<SUB>2</SUB> gas pressure except at high substrate temperatures. The ratio decreased with increasing O<SUB>2</SUB> gas pressure at 600°C. The FWHM of XRD at the (100) peak is also independent of O<SUB>2</SUB> gas pressure.<BR>We wish to thank F. Togashi of Science Univ. of Tokyo, Y. Hirabayashi and T. Watanabe for useful discussion and suggestions.
- 日本真空協会の論文
- 1993-03-20
著者
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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KANEKO Satoru
Industrial Research Institute, Kanagawa Prefectural Government
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OHYA Seishiro
Industrial Research Institute, Kanagawa Prefectural Government
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Kudoh Kazuhide
Department Of Applied Physics Tokyo University Of Science
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Kunihiro Kazuaki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Okamoto Shoji
Department Of Innovative And Engineered Materials Tokyo Institute Of Technology
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Kitazawa Koichi
Ntt Basic Research Laboratories
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Kurihara K
Ntt Basic Research Laboratories
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Ohya S
Kanagawa Industrial Technology Research Institute (kitri)
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Kaneko Satoru
Industrial Research Institute Of Kanagawa Prefecture
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KOBAYASHI Ken
Industrial Research Institute of Kanagawa Prefecture
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KARASAWA Shiro
Industrial Research Institute of Kanagawa Prefecture
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Karasawa S
Industrial Research Institute Of Kanagawa Prefecture
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