Ogata Tamotsu | ULSI Development Center, Mitsubishi Electric Corp.
スポンサーリンク
概要
関連著者
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Kobayashi K
Dep. Of Electronic Sci. And Engineering Kyoto Univ. Katsura Nishikyo Kyoto 615-8510 Japaninnovative
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OGATA Tamotsu
ULSI Laboratory, Mitsubishi Electric Corporation
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KUROKAWA Hiroshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Kobayashi K
Kobe Steel Ltd. Kobe Jpn
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Kamigaki K
College Of Liberal Arts Toyama University
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Ogata Toshihiro
Department Of Electronic Engineering Faculty Of Science And Engineering Saga University
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Kudoh Kazuhide
Department Of Applied Physics Tokyo University Of Science
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Kurokawa Hisayoshi
Department Of Electrical And Electronic Engineering Ehime University
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Ogata T
Ulsi Development Center Mitsubishi Electric Corp.
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Kurokawa Hiroshi
Advanced Technology R&d Center Mitsubishi Electric Corp
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Kurokawa H
Department Of Electrical And Electronic Engineering Ehime University
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Ogata Tamotsu
ULSI Development Center, Mitsubishi Electric Corp.
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KUROKAWA Hisayoshi
Department of Electrical and Electronic Engineering, Ehime University
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KOBAYASHI Kiyoteru
ULSI Laboratory, Mitsubishi Electric Corporation
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HIRAYAMA Makoto
ULSI Laboratory, Mitsubishi Electric Corporation
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Kinoshita K
Ntt Basic Research Laboratories
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Kunihiro Kazuaki
Optoelectronics And High Frequency Device Research Laboratories Nec Corporation
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Kitazawa Koichi
Ntt Basic Research Laboratories
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Kurihara K
Ntt Basic Research Laboratories
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Hirayama M
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirayama Makoto
Ulsi Laboratory Mitsubishi Electric Corporation
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KOBAYASHI Kiyoteru
ULSI Laboratory, Evaluation amp Analysis Center, Mitsubishi Electric Corporation
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Kinoshita K
Ntt Basic Research Laboratory
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Arima Hideaki
Ulsi Development Center Mitsubishi Electric Corp.
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Wake Setsuo
Ulsi Development Center Mitsubishi Electric Corp.
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WATANABE Hideyuki
Diamond Research Center, National Institute of Advanced Industrial Science and Technology (AIST)
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Ohno Yoshikazu
Ulsi Laboratory Mitsubishi Electric Corporation
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BAN Cozy
ULSI Laboratory, Mitsubishi Electric Corporation
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UEYAMA Akemi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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MURANAKA Seiji
ULSI Laboratory, Mitsubishi Electric Corporation
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HAYASHI Tomohiko
Ryoden Semiconductor System Engineering Corporation
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KOBAYASHI Junji
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Kishio Kohji
Department Of Applied Chemistry University Of Tokyo:sorst Japan Science And Technology Corporation (
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Matsui Yasushi
Electronics Research Laboratory Corporate Research & Development Matsushita Electronics Corporat
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Watanabe H
Semiconductor Leading Edge Technol. Inc. Yokohama Jpn
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INOUE Masao
ULSI Development Center, Mitsubishi Electric Corp.
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NAKAMURA Tadashi
Ryoden Semiconductor System Engineering Corp.
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TSUJI Naoki
Memory IC Div., Mitsubishi Electric Corp.
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KOBAYASHI Kiyoteru
Memory IC Div., Mitsubishi Electric Corp.
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KAWASE Kazuo
Advanced Technology R&D Center, Mitsubishi Electric Corp.
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KANEOKA Tatsunori
ULSI Development Center, Mitsubishi Electric Corp.
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WATANABE Hajime
ULSI Laboratory, Mitsubishi Electric Corporation
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MATSUI Yasuji
ULSI Laboratory, Mitsubishi Electric Corporation
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Muto Y
The Institute For Materials Research Tohoku University
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Kobayashi Keiji
Toshiba Research And Development Center
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Kawase Kazuo
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Ban Cozy
Ulsi Laboratory Mitsubishi Electric Corporation
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Ueyama Akemi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Muranaka Seiji
Ulsi Laboratory Mitsubishi Electric Corporation
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Matsui Yasuji
Ulsi Laboratory Mitsubishi Electric Corporation
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Hirayama Makoto
Lsi R&d Lab. Mitsubishi Electric Corp.
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Kaneoka Tatsunori
Ulsi Development Center Mitsubishi Electric Corp.
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Tsuji Naoki
Memory Ic Div. Mitsubishi Electric Corp.
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Kobayashi Junji
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Inoue Masao
Ulsi Development Center Mitsubishi Electric Corp.
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Watanabe Hajime
Ulsi Laboratory Mitsubishi Electric Corporation
著作論文
- Impact of Organic Contaminants from the Environment of Electrical Characteristics of Thin Gate Oxides
- Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxides
- High-Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO_2 Formed in a SiCl_4-N_2O System