MATSUYAMA Tetsuya | Department of Physics and Electronics, Faculty of Engineering, Osaka Prefecture University

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著作論文

Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : II. Strain in GaAsP Layer
Crystalline Structure of Heteroepitaxial GaAs and GaAsP Layers Grown on GaAs Substrates Investigated by X-ray Diffraction : I. Mosaic Structure
Imaging of Ultrasonic Velocity Change Corresponding to Optical Absorption Distribution
High Spin Polarization of Conduction Band Electrons in GaAs-GaAsP Strained Layer Superlattice Fabricated as a Spin-Polarized Electron Source
High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter
Spin-Dependent Luminescence of Highly Polarized Electrons Generated by Two-Photon Absorption in Semiconductors : Optical Properties of Condensed Matter
Suppression of Side Fringes in Low-Coherence Interferometric Measurements Using Gain- or Loss-Modulated Multimode Laser Diodes
Influence of Nonlinear Gain Saturation on the Time-Bandwidth Product of Optical Pulse from a Gain-Switched Semiconductor Laser

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