High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes : B-5: GaAs IC
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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TSUJI Tsutomu
Microbiology, Faculty of Pharmaceutical Sciences, Hoshi University
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Tsuji Tsutomu
Microelectronics Research Laboratories
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Kanamori Mikio
Microelectronics Research Laboratories
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TAKAYAMA Yoichiro
Microelectronics Research Laboratories
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Higashisaka Asamitsu
Microelectronics Research Laboratories
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Tsuji Tsutomu
Microbiology Faculty Of Pharmaceutical Sciences Hoshi University
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FURUTSUKA Takashi
Microelectronics Research Laboratories
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KATANO Fumiaki
Microelectronics Research Laboratories
関連論文
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- MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
- High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes : B-5: GaAs IC
- Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC