Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC

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MOCVD GaAlAs Hetero-Buffer GaAs Low-Noise MESFETs : B-5: GaAs IC
Investigation on the Drift of GaAs MESFET's by High Frequency Parameters : B-2: GaAs FET/LED AND DETECTOR
High-Speed E/D GaAs ICs with Closely-Spaced FET Electrodes : B-5: GaAs IC
Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC
Temperature Dependence of Gunn Effect in GaAs over the Range 77°K to 545°K
Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate Interface
Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown Films

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