Investigation on the Drift of GaAs MESFET's by High Frequency Parameters : B-2: GaAs FET/LED AND DETECTOR

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1980-04-30

著者

• Hasegawa Fumio

  Central Research Laboratories Nippon Electric Co. Ltd.

• Ohata Keiichi

  Central Research Laboratories Nippon Electric Co. Ltd.

• ITOH Hitoshi

  Central Research Laboratories, Nippon Electric Co., Ltd.

• Itoh Hitoshi

  Central Research Laboratories Nippon Electric Co. Ltd.

関連論文

• Investigation on the Drift of GaAs MESFET's by High Frequency Parameters : B-2: GaAs FET/LED AND DETECTOR
• Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC
• Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate Interface
• Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
• Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
• Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
• Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown Films

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