Hasegawa Fumio | Central Research Laboratories Nippon Electric Co. Ltd.

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著作論文

Investigation on the Drift of GaAs MESFET's by High Frequency Parameters : B-2: GaAs FET/LED AND DETECTOR
Power GaAs MESFETs with a Graded Recess Structure : B-1: GaAs IC
Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate Interface
Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown Films

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