Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1968-12-05

著者

• SAITO TAKESHI

  Central Research Laboratories

• Hasegawa Fumio

  Central Research Laboratories Nippon Electric Co. Ltd.

• HASEGAWA Fumio

  Central Research Laboratories, Nippon Electric Co., Ltd.

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• Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
• Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
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