Bioconversion of 9-Monoacetyl-Josamycin to Josamycin by Streptomyces olivochromogenes
スポンサーリンク
概要
- 論文の詳細を見る
Some species of Streptomyces including S. olivochromogenes var. abashirensis were forund to liberate 9-acetyl groups of artificial josamycin derivatives, such as 9-monoacetyl-josamycin and 9,2'-diacetyl-josamycin, but not to liberate 3-acetyl and 4"-isovaleryl groups of josamycin or its derivatives. 3-Deacetyl-josamycin which is a by-product in the josamycin fermentation is chemically converted to 9-monoacetyl-josamycin as well as josamycin. Therefore, this bioconversion of 9-monoacetyl-josamycin to josamycin as described here may enable 3-deacetyl-josamycin to be used as a useful resource for the manufacture of josamycin.
- 社団法人日本生物工学会の論文
- 1991-05-25
著者
-
Osono T
Central Research Laboratories
-
EIKI HIDEO
Yamanouchi Pharmaceutical CO., Ltd., Manufacturing Technology Institute
-
YAMAGUCHI HIROSHI
Central Research Laboratories
-
SUZUKI KENICHI
Central Research Laboratories
-
SAITO TAKESHI
Central Research Laboratories
-
OSONO TAKASHI
Central Research Laboratories
-
Eiki H
Yamanouchi Pharmaceutical Co. Ltd. Manufacturing Technology Institute
-
Yamaguchi Hiroshi
Central R&d Laboratory Kobayashi Pharmaceutical Co. Ltd.
関連論文
- Bioconversion of 9-Monoacetyl-Josamycin to Josamycin by Streptomyces olivochromogenes
- Effect of Broth Dilution and Its Application in Josamycin Fermentation
- Effect of Mineral Salts on Apparent Viscosity and a Ratio of Product Components in Josamycin Fermentation
- Product Inhibition and Its Removal on Josamycin Fermentation by Streptomyces narbonensis var. josamyceticus
- In Vitro and in Vivo Evaluation of the Efficacy of Bovine Colostrum against Human Rotavirus Infection
- Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
- Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
- Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
- A New Gas Etching Method for Vapor Growth of GaAs
- Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown Films
- Silicon Epitaxial Solar Cells by Ion-Plating Deposition : I-3: SILICON SOLAR CELLS (III)