A New Gas Etching Method for Vapor Growth of GaAs

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1972-01-05

著者

• SAITO TAKESHI

  Central Research Laboratories

• Nozaki Tadatoshi

  Central Research Laboratories Nippon Electric Co. Ltd.

関連論文

• Bioconversion of 9-Monoacetyl-Josamycin to Josamycin by Streptomyces olivochromogenes
• Effect of Broth Dilution and Its Application in Josamycin Fermentation
• Effect of Mineral Salts on Apparent Viscosity and a Ratio of Product Components in Josamycin Fermentation
• Product Inhibition and Its Removal on Josamycin Fermentation by Streptomyces narbonensis var. josamyceticus
• Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate Interface
• Occurrence of a High Resistance Layer in GaAs Substrate through Vapor Epitaxial Process
• Occurrence of a High Resistance Layer at Vapor Epitaxial GaAs Film-Substrate Interface
• Si Ion Implantation into GaAs
• A New Gas Etching Method for Vapor Growth of GaAs
• Impurity Transfer in GaAs Vapor Growth and Carrier-Concentration Profiles of the Grown Films
• Silicon Epitaxial Solar Cells by Ion-Plating Deposition : I-3: SILICON SOLAR CELLS (III)

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