Si Ion Implantation into GaAs

概要

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Isothermal annealing experiments were carried out at annealing temperatures up to 900℃ for Cr-doped GaAs implanted with St at 60 and 130 keV and for doses ranging from approximately 10^<12> to 10^<15>/cm^2. The implantation induced damage recovery was examined from the behavior of the surface carrier concentration and mobility. Optimum anneal conditions which gave a maxi-mum value of the surface carrier concentration were experimentally determined. High purity epitaxial GaAs was also used as a substrate. After annealing under optimum conditions, the carrier concentration and mobility profiles were measured. For doses ≤10^<13>/cm^2, Gaussian type carrier concentration profiles were obtained indicating the small effect of radiation-enhanced diffusion. Almost the same mobility values as these of vapor epitaxial GaAs were obtained at room and liquid nitrogen temperatures for an implanted layer in high purity epitaxial GaAs.
社団法人応用物理学会の論文
1976-10-05