Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell
スポンサーリンク
概要
- 論文の詳細を見る
We demonstrate an efficient two-color photoexcitation process in a GaNAs/AlGaAs multiple quantum well (MQW) solar cell. The introduction of N into the GaAs MQW induces a marked reduction in bandgap energy, forming a large conduction band offset, and the formation of localized states. Owning to this deep confinement, the thermal escape of photogenerated carriers from the QWs is greatly suppressed even at room temperature, resulting in a reduction in photocurrent. An additional photocurrent is generated by a two-color absorption process of sub-bandgap photons.
- 2012-06-25
著者
-
NODA Takeshi
National Cancer Center Hospital
-
SAKODA Kazuaki
National Institute for Materials Science
-
Mano Takaaki
National Inst. For Materials Sci. Ibaraki Jpn
-
Ding Yi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
-
Sakoda Kazuaki
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
-
Elborg Martin
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
-
Jo Masafumi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
-
Noda Takeshi
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
関連論文
- 20pPSB-55 Electric field modulation of exciton recombination in GaAs quantum double rings
- Energy renormalization of exciton complexes in GaAs quantum dots
- Helicobacter pylori Extracts Exhibit Nicotinamide Adenine Dinucleotide-derived Adenylation but Not Mono(adenosine 5'-diphosphate-ribosyl)ation of DNA Ligase
- 10-O-05 Defect Modes in 3D Photonic Crystal for Microwave Applications
- 20pHK-7 Tuning the fine interaction in semiconductor quantum dot : role of geometry
- Photon Correlation in GaAs Self-Assembled Quantum Dots
- InAs Quantum Dots Growth by Modified Droplet Epitaxy Using Sulfur Termination
- Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates : Suppression of Fine-Structure Splitting
- Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy
- New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy
- Fabrication of submicron GaAs/AlAs double-barrier resonant tunneling diodes by wet etching with in droplets as mask
- Structure of nanowires fabricated by electron beam induced deposition to connect self-assembled quantum structures (Special issue: Microprocesses & nanotechnology)
- Protein degradation in the vacuole-lesson from the yeast
- MOLECULAR BIOLOGICAL STUDIES ON AUTOPHAGY IN YEAST
- Self-Assembly of GaAs Quantum Wires Grown on (311)A Substrates by Droplet Epitaxy
- The Early Secretory Pathway Contributes to Autophagy in Yeast
- Extension of Absorption Wavelength in GaAs/AlGaAs Quantum Dots with Underlying Quantum Well for Solar Cell Application (Special Issue : Photovoltaic Science and Engineering)
- Current-Voltage Characteristics of GaAs/AlGaAs Coupled Multiple Quantum Well Solar Cells (Special Issue : Photovoltaic Science and Engineering)
- Anomalous Capacitance-Voltage Characteristics of GaAs/AlGaAs Multiple Quantum Well Solar Cells (Special Issue : Photovoltaic Science and Engineering)
- Effects of Sb/As Interdiffusion on Optical Anisotropy of GaSb Quantum Dots in GaAs Grown by Droplet Epitaxy
- Two-Color Photoexcitation in a GaNAs/AlGaAs Quantum Well Solar Cell
- Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs