Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement

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概要

• 論文の詳細を見る

• Using a combination of a radial polarizer with a linear one in the incident light path while measuring the Raman spectra of strained Si (s-Si) with a high-numerical-aperture lens, we succeeded in the clear domination of the forbidden doublet phonon band [transverse optical (TO) phonon for the light directed along the [001] axis of Si] over the allowed singlet longitudinal optical phonon one. This is important for the precise stress-induced TO phonon Raman shift determination and, therefore, for precise quantitative study of the local stress distribution on the (001) Si surface.

• 2012-07-25

著者

• Kanayama Toshihiko

  National Inst. Of Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Tada Tetsuya

  Nanoelectronics Research Institute, AIST, Tsukuba, Ibaraki 305-8562, Japan

• Tada Tetsuya

  Nanoelectronic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

• Poborchii Vladimir

  Nanoelectronics Research Institute, AIST, Tsukuba, Ibaraki 305-8562, Japan

• Poborchii Vladimir

  Nanoelectronic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan

• Kanayama Toshihiko

  National Institute of Advanced Industrial Science and Technology, AIST, Tsukuba, Ibaraki 305-8568, Japan

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• Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement
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