Spatial Distribution of Photocurrent in Si Stripes under Tilted Illumination Measured by Multimode Scanning Probe Microscopy
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概要
- 論文の詳細を見る
Spatial distribution of photocurrent in Si stripes of 50--1000 nm in width were investigated as a function of optical excitation wavelength by multimode scanning probe microscopy (MSPM). Inhomogeneous distribution of the MSPM photocurrent in the Si stripe interior was attributed to the light intensity profile. A model that included light absorption depth profile and the probe-induced band-bending region reproduced the photocurrent profile for tilted illumination of the stripes. An effective spatial resolution of {\sim}10 nm was deduced from the photocurrent measurements with multimode SPM in the constant-force mode.
- 2012-08-25
著者
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Tada Tetsuya
Nanoelectronic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Poborchii Vladimir
Nanoelectronic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Bolotov Leonid
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Fukuda Koichi
Nanoelectronic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Kanayama Toshihiko
Nanoelectronic Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
関連論文
- Spatial Distribution of Photocurrent in Si Stripes under Tilted Illumination Measured by Multimode Scanning Probe Microscopy
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- Quantitative Evaluation of Dopant Concentration in Shallow Silicon p--n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy
- Quantitative Evaluation of Dopant Concentration in Shallow Silicon p-n Junctions by Tunneling Current Mapping with Multimode Scanning Probe Microscopy (Special Issue : Solid State Devices and Materials)