Low Critical Concentration of Metal--Insulator Transition of Vanadium Doped Amorphous Boron
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概要
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The metal--insulator transition (MIT) of V- and Zr-doped amorphous boron films (VxB100-x, ZrxB100-x) was studied. The temperature dependences of the electrical conductivity, the X-ray diffraction patterns and the X-ray absorption fine structures were measured for the samples. The compositional boundary of the metal--insulator transition is found between x = 2.9 and 3.7 in VxB100-x, and between x = 11 and 14 in ZrxB100-x. It is considered that at the transition, the network of B12 icosahedral clusters remains unchanged for V-doped films, while the network changes into an intermetallic compound-like structure for Zr-doped films. The low concentration of vanadium and no structural change for the transition of V-doped films are peculiar, while the critical concentration of Zr and the structural change of Zr-doped films are similar to those of transition-metal-doped amorphous silicon or germanium. The origin of the peculiarity of MIT for the V-doped films is discussed in relation to the metallic-covalent bonding conversion of the icosahedral clusters.
- 2011-02-15
著者
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URUGA Tomoya
Japan Synchrotron Radiation Research Institute
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Soga Kohei
Department Of Materials Science And Technology Tokyo University Of Science
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Kimura Kaoru
Department Of Advanced Material Science University Of Tokyo
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Hosoi Shizuka
Department Of Advanced Material Science University Of Tokyo
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Tanabe Kenji
Department Of Agrobiology Faculty Of Agriculture Tottori University
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Yamaguchi Hideshi
Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Soga Kohei
Department of Materials Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan
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Osumi Kazuaki
Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Kimura Kaoru
Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Tanabe Kenji
Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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