Water-Related Hole Traps at Thermally Grown GeO2--Ge Interface

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概要

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• The generation mechanism of positive charge present in germanium oxide film thermally grown on a germanium substrate has been investigated in this study. Water-related hole traps are generated in the interfacial germanium suboxide layer. The negative flat-band voltage shift due to the charged hole traps increases with increasing electric stress field in the oxide. Both low-temperature growth of the oxide film and postmetallization annealing have been proposed for the improvement of the flat-band voltage shift. The former is effective in minimizing the suboxide layer thickness by suppressing germanium monoxide volatilization during the oxide growth. The latter method successfully reduces the density of traps caused by water desorption from the interfacial suboxide layer.

• 2012-04-25

著者

• Ueno Tomo

  Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology

• Oniki Yusuke

  Department of Electronic and Electrical Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Oniki Yusuke

  Department of Electronic Information Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

関連論文

• Generation and Controlling the Trap in Absorbent Germanium Oxide Film
• Generation and Controlling the Trap in Absorbent Germanium Oxide Film
• HfO2/Si and HfSiO/Si Structures Fabricated by Oxidation of Metal Thin Films
• Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition
• Novel Fabrication Process for HfO2 Thin Film for Gate Dielectric
• Low-Temperature Fabrication of Ultrathin ZrO2/Si Structure Using Metal Deposition Followed by Oxygen Annealing
• Water-Related Hole Traps at Thermally Grown GeO2--Ge Interface

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