Low-Temperature Fabrication of Ultrathin ZrO2/Si Structure Using Metal Deposition Followed by Oxygen Annealing
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概要
- 論文の詳細を見る
Metal deposition followed by oxygen annealing has been carried out for the fabrication of ZrO2/Si structures. Using this method, 200°C oxygen annealing enables the oxidation of Zr metal and 220°C annealing enables the surface potential control of Si in metal–insulator–semiconductor (MIS) structures, even if the dielectric constant of ZrO2 has been shown to be 11.8. High-quality ZrO2 films with a dielectric constant of ${\sim}20$ can be achieved by 300°C annealing with an interfacial layer of 0.9 nm thickness. For these films, no degradation of leakage characteristics was observed after the thermal budget corresponding to that of impurity activation at 850°C for 30 min. Consequently, using this method, a high-quality ZrO2/Si structure that has good chemical stability under a high thermal budget could be fabricated at a low temperature.
- 2005-01-15
著者
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Ueno Tomo
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Kuroiwa Koichi
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Hasumi Masahiko
Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology
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Nagasato Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Iwazaki Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Kuroiwa Koichi
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi Koganei, Tokyo 184-8588, Japan
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Ueno Tomo
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi Koganei, Tokyo 184-8588, Japan
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Nagasato Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi Koganei, Tokyo 184-8588, Japan
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Aya Tsutomu
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi Koganei, Tokyo 184-8588, Japan
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Iwazaki Yoshitaka
Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-machi Koganei, Tokyo 184-8588, Japan
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