Generation and Controlling the Trap in Absorbent Germanium Oxide Film

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概要

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• The nature of the anomalous positive charge present in thermally grown germanium dioxide film as well as its generation mechanism have been investigated. Flat-band voltage shift due to the positive charge, which can be generated at a given electric field, increases linearly with the maximum field in the oxide. Moreover, the density of the positive charge strongly depends on the amount of water molecules in the oxide. It was found that the positive charge is reduced by anneal process due to water desorption from the oxide film.

• 2011-08-25

著者

• Ueno Tomo

  Department Of Electrical And Electronic Engineering Tokyo University Of Agriculture And Technology

• Oniki Yusuke

  Department of Electronic and Electrical Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

• Oniki Yusuke

  Department of Electronic Information Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan

関連論文

• Generation and Controlling the Trap in Absorbent Germanium Oxide Film
• Generation and Controlling the Trap in Absorbent Germanium Oxide Film
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• Low-Temperature Fabrication of Ultrathin ZrO2/Si Structure Using Metal Deposition Followed by Oxygen Annealing
• Water-Related Hole Traps at Thermally Grown GeO2--Ge Interface

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