Atomic Structure of Faceted Planes of InAs Quantum Dots on GaAs (001) Studied by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
Three-dimensional island structure of the lattice mismatched InAs/GaAs (001) system was prepared by molecular beam epitaxy (MBE) and its images showing atomic structure on faceted planes were taken in situ by ultra-high vacuum scanning tunneling microscopy (UHV-STM). (113), (114) and (215) faceted planes are observed on 3D InAs islands. Based on high resolution STM images, atomic structural models of these faceted planes surfaces are proposed. The structure of the (113) planes is found to be different from those observed on nominal-flat InAs and GaAs (113) surfaces. The structural information will be useful for characterization of surface energy/stress of the islands, diffusion process on the surface, and interface properties. The result sheds a light on the formation mechanism and self-organization process of quantum dots.
- 社団法人応用物理学会の論文
- 1999-01-30
著者
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Sakurai T
Institute For Materials Research (imr) Tohoku University
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Xue Q‐k
Tohoku Univ. Sendai Jpn
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Hasegawa Y
Institute For Solid State Physics University Of Tokyo
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Hasegawa Yukio
Institute For Materials Research (imr) Tohoku University And Precursory Research For Embryonic Scien
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Xue Qi-Kun
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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KIYAMA Hisashi
Institute for Materials Research, Tohoku University
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Kiyama Hisashi
Institute For Materials Research Tohoku University
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Xue Qi-Kun
Institute for Materials Research, Tohoku University
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