Indium-rich 4x2 Reconstruction in Novel Growth of InAs on the GaAs(001)(STM-BEEM interfaces)
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概要
- 論文の詳細を見る
Molecular beam epitaxy (MBE) of the lattice mismatched InAs/GaAs(001) system is studied by in situ scanning tunneling microscopy (STM) and reflection high energy electron diffraction (RHEED). We found that deposition of submonolayer (〜0.6ML) In on the GaAs(001)-As-rich 2x4-β surface could result in a new 4x2 reconstruction, and that if the growing front maintains this reconstruction, the multilayer InAs grows two-dimensionally and the commonly observed three-dimensional islanding is completely surpressed. The atomic structure for this new 4x2 reconstruction is discussed on the basis of voltage-dependent STM images. In addition, a "domain wall" structure is discussed, representing a new type of strain relief mechanism in the layer-by-layer growth reported here.molecular beam epitaxyscanning tunneling microscopyheterojunctionInAsGaAs
- 東北大学の論文
- 1997-03-31
著者
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Sakurai T
Institute For Materials Research (imr) Tohoku University
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Xue Q‐k
Tohoku Univ. Sendai Jpn
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Hasegawa Y
Institute For Solid State Physics University Of Tokyo
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Hasegawa Yukio
Institute For Materials Research (imr) Tohoku University And Precursory Research For Embryonic Scien
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Ogino Tsuyoshi
Institute For Materials Research Tohoku University
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Xue Qi-Kun
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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KIYAMA Hisashi
Institute for Materials Research, Tohoku University
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Kiyama Hisashi
Institute For Materials Research Tohoku University
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Xue Qi-Kun
Institute for Materials Research, Tohoku University
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