GaAs(100) (2×4) Surface Study by Molecular Beam Epitaxy and Field-Ion-Scanning-Tunneling-Microscopy
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概要
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The GaAs(100)(2×4) surface was studied by molecular beam epitaxy (MBE) and field-ion-scanning-tunneling-microscopy (FI-STM). The results showed that the GaAs(100)(2×4) surface unit cell consists of two dimers and two missing dimers of As. The c(2×8) reconstruction was observed to originate by the phase shift induced by the As vacancies. We also observed the domain boundaries on the GaAs(100)(2×4) surface and they were attributed to two dimensional island growth. A structural model was proposed to explain the observed surface reconstructions.
- 社団法人応用物理学会の論文
- 1993-03-30
著者
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Hashizume Tomihiro
Institute For Materials Research Tohoku University
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University
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XU Hongwei
Institute for Materials Research, Tohoku University
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Xu Hongwei
Institute For Materials Research Tohoku University
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SAKURAI Toshio
Institute for Materials Research, Tohoku University
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