Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
Nitridation of the GaAs(001) surface using an N-atom radio-frequency plasma source is investigated by in situ scanning tunneling microscopy (STM). Atomically flat (3×3) nitrided surfaces commensurate and coherent with the substrate have been achieved on the As-rich (2×4) and (2×6) surfaces. Nitridation proceeds via competing mechanisms of (3×3) ordering and step-etching caused by the N-atoms. The former simply involves N-As exchange, which does not require significant morphology modification, whereas the latter causes the roughening of the substrate under the standard GaN growth conditions. On the Ga-rich surface, the GaN islands immediately form at the step-edges, suggesting the possibility of self-assembled nanostructures of GaN.
- 社団法人応用物理学会の論文
- 1997-11-15
著者
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Sakurai T
Institute For Materials Research (imr) Tohoku University
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Xue Q‐k
Tohoku Univ. Sendai Jpn
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Xue Qi-zhen
Institute For Materials Research Tohoku University
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Hasegawa Y
Institute For Solid State Physics University Of Tokyo
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Hasegawa Yukio
Institute For Materials Research (imr) Tohoku University And Precursory Research For Embryonic Scien
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Tsong Ignatius
Institute For Materials Research (imr) Tohoku University:(permanent Address) Department Of Physics A
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Xue Qi-Kun
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Xue Qi-Kun
Institute for Materials Research, Tohoku University
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