Adsorption of Na on the GaAs(110) Surface Studied by the Field-Ion-Scanning-Tunneling-Mieroscopy
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概要
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The geometry and the coverage-dependent growth structures formed by Na deposition on the GaAs(110) surface at room temperature were studied using a field-ion scanning tunneling microscope. When the coverage is low, Na adatoms reside on the bridge site encompassing one Ga and two As surface atoms to form linear chains along the [11^^-0] direction. The Na-Na nearest-neighbor distance in this low-density chain structure is 8 Å. At slightly increased coverage, the Na chains began to disorder. Some of them were packed closer to form domains showing a local 2 × 2 structure. None of high-density two dimensional ordered structures or low-density zigzag chains was observed, in contrast to the Cs/GaAs(110) system. Additional Na adsorption resulted in the formation of three-dimensional disordered clusters. The saturation coverage of Na was determined to be ∼0.1 ML (1 ML≡2 Na per substrate unit cell).
- 社団法人応用物理学会の論文
- 1992-08-01
著者
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HASHIZUME Tomihiro
Institute for Materials Research (IMR), Tohoku University
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SAKURAI Toshio
Institute for Materials Research (IMR), Tohoku University
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JEON Dong-Ryul
Institute for Materials Research (IMR), Tohoku Unversity
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BAI Chunli
Institute for Materials Research (IMR), Tohoku Unversity
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Jeon Dong-ryul
Institute For Materials Research (imr) Tohoku University:(present Address) Department Of Physics Myo
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Jeon Dong-ryul
Department Of Physics Myongji University
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Bai Chunli
Institute For Materials Research (imr) Tohoku University:(present Address) Institute Of Chemistry Ch
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Bai Chunli
Center For Molecular Science Institute Of Chemistry The Chinese Academy Of Sciences
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University
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