Scanning Tunneling Microscopy of Oxygen and Sodium Adsorption on the Si(111) Surface
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概要
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The surface structure and the insulator-metal transition of the Na overlayer on the Na-induced Si(111)3×1 surface was studied using scanning tunneling microscopy and spectroscopy. The results suggested that this reconstruction was caused by the conversion of the 7×7 structure to the bulk-terminated 1×1 structure and a monolayer of Na adatoms arranged in the 3×1 periodicity at a coverage of 2/3 monolayer. When oxygen was adsorbed on this surface the surface morphology hardly changed up to several hundred Langmuir. This surface passivation arose from the removal of Si dangling bonds by the Na adatoms. Upon further Na evaporation onto the Si(111)3×1-Na surface at room temperature we could grow an epitaxial Na double layer and a multilayer through an island formation. Oxygen adsorption on the Na double layer, and a multilayer resulted in cluster formation. This result indicated that more than two layers of alkali overlayer was needed to promote the chemical activity on a silicon surface.
- 社団法人応用物理学会の論文
- 1993-03-30
著者
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HASHIZUME Tomihiro
Institute for Materials Research (IMR), Tohoku University
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SAKURAI Toshio
Institute for Materials Research (IMR), Tohoku University
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Jeon Dong-ryul
Institute For Materials Research (imr) Tohoku University:(present Address) Department Of Physics Myo
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Jeon Dong-ryul
Department Of Physics Myongji University
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Sakurai T
Institute For Materials Research (imr) Tohoku University
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Sakurai Toshio
Institute For Materials Research (imr) Tohoku University
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Hashizume Tomihiro
Institute For Materials Research (imr) Tohoku University
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