Field Emission Behavior of Diamond-like Carbon Films

概要

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Field emission behaviors from (nitrogenated) diamond-like carbon (DLC) films deposited on p-type Si (100) wafer by r.f. plasma assisted CVD method were investigated. Bias voltage of the substrate was varied from - 100V to -900V at a fixed pressure of l0mTorr. Onset field of the film deposited at the bias voltage of -100V was 10V/μm, while those of the films deposited at higher bias voltage were 20-24V/μm. The effective work functions of all DLC films were 0.05 eV. Nitrogen incorporation to DLC films enhanced the field emission behavior. Depending on the nitrogen source, the effective work functions ranged from 0.02 to 0.04eV. This behavior may be related to more efficient transport carriers from doped Si, through the film, to the emitting surface.
社団法人電子情報通信学会の論文
1995-10-24